MANUFACTURING METHOD FOR BONDED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an SOI wafer with a high-concentration layer at a bottom of an SOI layer at lost cost in a manner that a bonded SOI wafer manufactured by an ion implantation separation method with a wafer with general dopant concentration used as a bonding wafer is subjected to epitaxial growth after the dopant concentration of a seed layer is increased.

SOLUTION: A manufacturing method for a bonded wafer comprises the steps of: manufacturing a bonded wafer with a silicon thin film on a base wafer by an ion implantation separation method; performing flattening thermal treatment in an atmosphere including hydrogen or hydrogen chloride on the bonded wafer; and performing thermal treatment after the flattening thermal treatment while feeding a dopant gas to a thermal treatment chamber where the flattening thermal treatment has been performed in order to control the dopant concentration of the silicon thin film.

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