| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a DIBL(Drain Induced Barrier Lowering) property by including a first gate electrode buried in a substrate. CONSTITUTION: A first gate electrode(27A) fills a first trench formed on a substrate. A second trench is formed on both substrates of the first trench and spaced from the first trench at a predetermined interval. A diffusion barrier layer(31A) fills a part the second trench. An electrode layer fills the rest of the second trench on the diffusion barrier layer. An impurity region(39) is formed on a substrate between the first trench and the second trench.
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