发明名称 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASHES OF LIGHT
摘要 Radiant energy from a semiconductor wafer which is determined from the theoretical value of black body radiation and the actually measured result of an output from a photodiode are brought into correspondence with each other, and a table showing a correlation therebetween is acquired and stored on a magnetic disk. When a semiconductor wafer to be treated is irradiated with flashes of light from flash lamps, the photodiode receives radiant light emitted from the semiconductor wafer. A controller determines, from the output from the photodiode, the radiant energy emitted per unit time from the semiconductor wafer irradiated with flashes of light, based on the acquired table. The controller further determines the surface temperature of the semiconductor wafer from the determined radiant energy.
申请公布号 US2012076477(A1) 申请公布日期 2012.03.29
申请号 US201113177705 申请日期 2011.07.07
申请人 KUROIWA TORU 发明人 KUROIWA TORU
分类号 F27D11/12 主分类号 F27D11/12
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