Mask pattern data generation method, mask manufacturing method, semiconductor device manufacturing method, and pattern data generation program

摘要

According to an aspect of the present invention, there is provided a mask pattern data generation method including: a first step of obtaining a mask data representing from a design pattern by performing a process simulation with a process parameter having a first value; a second step of obtaining a finished pattern from the mask data by performing the process simulation with the process parameter having a different value; a third step of verifying whether a dimensional error therebetween is within an allowable range; and a fourth step of: if the dimensional error is within the allowable range, determining the mask pattern data; and if the dimensional error is not within the allowable range, repeating the above steps by updating the process parameter until the dimensional error becomes within the allowable range.