| 摘要 |
<p>A method is provided for correctly determining an exposure condition such as a focus margin and the like. The method is configured to determine the exposure condition for a wafer W to undergo a predetermined exposure by utilizing a surface inspection apparatus 1 for inspecting the surface of the wafer W by detecting diffracted light from the wafer irradiated with illumination light. The method includes an illumination process (step S101) for irradiating the surface of an FEM wafer 50 with predetermined exposure properties with the illumination light, a detection process (step S102) for detecting the diffracted light from the surface of the FEM wafer 50 irradiated with the illumination light, and a determining process (step S103) for determining the exposure condition based on a variation in brightness of the detected diffracted light.</p> |
