| 摘要 |
A SiP type semiconductor device and a method of producing the same wherein curvature of a wafer is suppressed in the production steps, workability does not decline, and high throughput can be attained is provided. An insulation layer is formed by stacking a plurality of resin layers (20 to 23) on a semiconductor substrate (10a), wiring layers (30 to 35) are formed by being buried in the insulation layer so as to be connected to an electronic circuit, an insulating buffer layer (24) for buffering a stress generated at the time of being mounted on a board is formed on the insulation layer, and a conductive post (36) is formed through the buffer layer and connected to the wiring layer, and a projecting electrode (37) is formed projecting from a surface of the buffer layer and connected to the conductive post; and resin layers (20 to 23) composing the insulation layer are formed on a region excluding an outer circumferential portion of the semiconductor substrate, and the buffer layer is formed on a region not exceeding a formation region of a resin layer having the largest area among the plurality of resin layers. |
