| 摘要 |
A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate (S) to a pair of electrode mounts (28a), (28b) ; lowering a resistance value of the silicon substrate (S) by raising temperature of the silicon substrate (S) with heat from an outer heater (23) provided outside the case (14); heating the silicon substrate (S) to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space (66) by stopping the outer heater (23); and forming a thin film on a surface of the silicon substrate (S) by injecting source gas (G) into the CVD space (66), when the silicon substrate (S) is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space (66) is lowered to a predetermined temperature. |
