Multi-layer bispectral detector with photodiodes

摘要

The detector has a stack of P type lower and upper absorption layers (14, 18) separated by an intermediate layer (16) forming a potential barrier between the layers. An upper face of the upper or lower absorption layer is partially covered with N-type lower and upper semiconductor layers (66, 68), where the lower and upper absorption layers form mesa lower and upper photodiodes. Trenches (62) are formed around pixels from an upper face of the stack and in thickness of the semiconductor layers entirely covering the upper or lower absorption layer so as to form N type semiconductor zones. An independent claim is also included for a method for manufacturing a bispectral matrix detector.