发明名称 |
Methods of Forming a Pattern of Semiconductor Devices |
摘要 |
Methods of forming a pattern of a semiconductor device including performing a double patterning process without using an atomic layer deposition (ALD) oxide film are provided. The methods may include forming a mask pattern on a substrate; forming a chemical attach process (CAP) material layer covering at least a portion of the mask pattern; forming a CAP adhesive layer by adhering at least a portion of the CAP material layer to the mask pattern by using a first baking process and a first development process; forming an interlayer covering at least a portion of the mask pattern and the CAP adhesive layer; and removing the mask pattern and the interlayer while allowing the CAP adhesive layer to remain by using a second baking process and a second development process.
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申请公布号 |
US2012064724(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113222447 |
申请日期 |
2011.08.31 |
申请人 |
LEE BO-HEE;KIM KYOUNG-MI;PARK JEONG-JU;PARK MI-RA;KIM JAE-HO;KIM YOUNG-HO |
发明人 |
LEE BO-HEE;KIM KYOUNG-MI;PARK JEONG-JU;PARK MI-RA;KIM JAE-HO;KIM YOUNG-HO |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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