| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC epitaxial wafer in which the triangular defect and the stacking fault are reduced, the uniformity of a carrier concentration and a film thickness is high, and which is step bunching free. <P>SOLUTION: The SiC epitaxial wafer is an SiC epitaxial wafer in which an SiC epitaxial layer is formed on a 4H-SIC single crystal substrate made to incline by 0.4°-5° of an off angle, and is characterized in that the defect density of the triangle shape of the surface of the SiC epitaxial layer is at most 1 piece/cm<SP POS="POST">2</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
