发明名称 |
SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME |
摘要 |
Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
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申请公布号 |
US2012061740(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113302090 |
申请日期 |
2011.11.22 |
申请人 |
TOREK KEVIN J.;FISCHER MARK;HANSON ROBERT J.;MICRON TECHNOLOGY, INC. |
发明人 |
TOREK KEVIN J.;FISCHER MARK;HANSON ROBERT J. |
分类号 |
H01L27/06;H01L29/78 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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