| 摘要 |
PURPOSE: A method for manufacturing a CuInSe2 thin film for a compound solar cell is provided to reduce manufacturing costs by depositing a CuInSe2 thin film on a substrate using a continuous flow reaction method. CONSTITUTION: A reactant A is prepared by dissolving copper supply source and indium supply source in water. A reactant B is prepared by dissolving a selenium supply source in water. The reactant A is mixed with the reactant B. The mixture is deposited on a substrate by using a continuous flow reaction method. The deposited thin film is thermally processed under a vacuum or nitrogen atmosphere. |
