| 摘要 |
Memory design techniques are disclosed that provide a high compression ratio at no loss in speed. The techniques can be embodied, for instance, in heterojunction bipolar transistor (HBT) based ROMs. By embedding compression logic (e.g., XOR) functionality directly into the address decoders and sense amplifiers of the memory device, a high compression ratio is achieved at no loss in speed. For example, the logic-based compression functionality can be directly implemented into the buffers that form the address decoder as well as the sense amplifiers. |
