发明名称 INFRARED LIGHT SENSOR HAVING A HIGH SIGNAL VOLTAGE AND A HIGH SIGNAL/NOISE RATIO
摘要 An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
申请公布号 KR20120022975(A) 申请公布日期 2012.03.12
申请号 KR20117027420 申请日期 2010.04.16
申请人 PYREOS LTD. 发明人 GIEBELER CARSTEN;WRIGHT JEFFREY;CHAMBERLAIN TIM
分类号 G01J5/34;G01J5/08 主分类号 G01J5/34
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