| 摘要 |
<p>A semiconductor device (1000) comprises: a thin film transistor (103) which comprises a gate wiring line (3a), source and drain wiring lines (13as, 13ad) and an island-shaped oxide semiconductor layer (7); and a capacity element (105) which comprises a first electrode (3b) formed by a conductive film that is the same as that constitutes the gate wiring line (3a), a second electrode (13b) formed by a conductive film that is the same as that constitutes the source wiring line (13as), and a dielectric layer arranged between the first electrode and the second electrode. In the semiconductor device (1000), a gate insulating layer (5) has a laminated structure which comprises a first insulating film (5A) that is in contact with the oxide semiconductor layer (7) and contains an oxide and a second insulating film (5B) that is arranged on the gate electrode side with respect to the first insulating film and has a higher dielectric constant than that of the first insulating film, and the dielectric layer contains the second insulating film (5B) and does not contain the first insulating film (5A). In the semiconductor device, the deterioration of the oxide semiconductor layer arising from oxygen deficiency can be prevented without decreasing the value of capacity of the capacity element.</p> |
