ALUMINUM ALLOY SEMICONDUCTOR INTERCONNECTIONS HAVING HIGH PURITY TITANIUM OR NIOBIUM BARRIER LAYER

摘要

The invention provides a device comprising an oxidized silicon substrate and an aluminum or aluminum alloy conductive path on said substrate, said conductive path being substantially completely separated from said substrate by a layer of substantially pure titanium or niobium along the length of the conductive path, said titanium or niobium being in direct contact with both said aluminum or aluminum alloy path and said silicon substrate. The invention further describes the application of this barrier layer of niobium or titanium to semiconductor circuits which require the use of multiple layers of conductive pattern. The invention further provides a method for producing a semiconductor device of the type described above.