| 摘要 |
A semiconductor device 1 according to one embodiment of the invention includes: a semiconductor substrate 10; a convex region 12 provided on the semiconductor substrate 10; a gate insulating film 100 provided on the convex region 12; a channel region 101 located in the convex region 12 under the gate insulating film 100; source/drain regions 115 provided on both sides of the convex region 12 and having extensions 115a on both sides of the channel region 101; and a halo layer 110 provided between the convex region 12 and the source/drain region 115 so as to contact with the convex region 12. |
