| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses the characteristic variation and the deterioration of a semiconductor circuit due to the stress. <P>SOLUTION: In a semiconductor device, vertical conductors 3 are provided adjacent to a semiconductor circuit in the thickness direction of a semiconductor layer 1. At least one of the vertical conductors 3 has an equiaxial crystal area in the area facing the semiconductor layer 1 or has the temperature difference of 50°C or more between the freezing point and the melting point. <P>COPYRIGHT: (C)2012,JPO&INPIT |
