| 发明名称 |
MANUFACTURING METHOD OF EL DISPLAY DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an EL display device with an opening ratio improved by optimizing a pixel structure. <P>SOLUTION: An EL display device comprises: a semiconductor layer provided close to a gate electrode of a switching TFT; a semiconductor layer provided close to a gate electrode of a current control TFT; source wiring provided on the same plane as the gate electrode of the switching TFT and the gate electrode of the current control TFT; an insulation film covering the gate electrode of the switching TFT, the gate electrode of the current control TFT, and the source wiring; first connection wiring electrically connected to a semiconductor layer of the switching TFT and the source wiring; second connection wiring electrically connected to the semiconductor layer of the switching TFT and the gate electrode of the current control TFT; and an EL element including a pixel electrode electrically connected to a semiconductor layer of the current control TFT, a light-emitting layer, and an electrode facing the pixel electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012043800(A) |
申请公布日期 |
2012.03.01 |
| 申请号 |
JP20110190293 |
申请日期 |
2011.09.01 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;SUZAWA HIDEOMI;ONO KOJI;TAKAYAMA TORU |
| 分类号 |
H05B33/10;G09F9/30;H01L21/20;H01L21/336;H01L27/32;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H05B33/10 |
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