发明名称 Memory device including self-ID information
摘要 Disclosed is a memory device including self-ID information. The memory device has a storage unit for storing information related to the memory device, such as a manufacturing factory, a manufacturing date, a wafer number, coordinates on a wafer and the like. Each bank of the memory device stores self-ID information related to the memory device and outputs the self-ID information out of a chip when an address is applied thereto during a test mode.
申请公布号 US8127069(B2) 申请公布日期 2012.02.28
申请号 US20070845264 申请日期 2007.08.27
申请人 AN YONG BOK;HYNIX SEMICONDUCTOR INC. 发明人 AN YONG BOK
分类号 G06F12/00;G11C11/401;G06F12/06;G06F13/00;G06F13/28;G11C5/00;G11C7/00;G11C8/00;G11C8/18;G11C29/00;G11C29/44;G11C29/48 主分类号 G06F12/00
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