| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily burying a conductive material into a gate recess. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming an insulating film on a semiconductor substrate, a recess provided on the insulating film, and a gate insulating film provided on the semiconductor substrate that is the bottom of the recess; forming a first gate electrode film with a conductive material including a first metal on the inner surfaces of the recess and on the top surface of the insulating film; forming a cover film having a higher melting point than that of the conductive material on the first gate electrode film so as not to cover a part of the side surfaces of the trench; and reflowing the first gate electrode film by performing heat treatment with the cover film formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
