发明名称 |
EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOMASKS, AND FABRICATION METHODS THEREOF |
摘要 |
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarizing process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber is substantially co-planar with the top surface of the hard mask layer. |
申请公布号 |
US2012045712(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US20100858159 |
申请日期 |
2010.08.17 |
申请人 |
CHANG CHING-HSU;WANG HUNG-CHUN;LUO BOREN;HUANG WEN-CHUN;LIU RU-GUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-HSU;WANG HUNG-CHUN;LUO BOREN;HUANG WEN-CHUN;LIU RU-GUN |
分类号 |
G03F1/00;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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