发明名称 |
LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES |
摘要 |
A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation. |
申请公布号 |
EP2419975(A2) |
申请公布日期 |
2012.02.22 |
申请号 |
EP20100764775 |
申请日期 |
2010.04.16 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. |
发明人 |
WALTER, Gabriel;FENG, Milton;HOLONYAK, Nick;THEN, Han, Wui;WU, Chao-hsin |
分类号 |
H01S3/0941;H01S3/00 |
主分类号 |
H01S3/0941 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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