发明名称 |
Complementary metal oxide semiconductor image sensor and method for fabricating the same |
摘要 |
A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode. |
申请公布号 |
US8120062(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090606845 |
申请日期 |
2009.10.27 |
申请人 |
KIM SANG-YOUNG;INTELLECTUAL VENTURES II LLC |
发明人 |
KIM SANG-YOUNG |
分类号 |
H01L31/0328 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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