| 摘要 |
A semiconductor device and method for manufacturing the same is provided, capable of gap-filling a copper metal wiring while minimizing void generation. A semiconductor device according to an embodiment includes a copper sulfide layer formed on a first barrier metal formed in a via and trench; and a via plug and an upper metal wiring formed in the via hole and the trench, respectively, on the copper sulfide layer and an exposed lower metal wiring. |
