Method for manufacturing back side illuminaton image sensor

摘要

A method of manufacturing a back side illumination image sensor according to an embodiment includes: forming an ion implantation layer by implanting ions throughout the front side of a first substrate; defining a pixel region by forming a device isolation region on the front side of the first substrate; forming a photosensitive device and a readout circuit on the pixel region; forming an interlayer dielectric layer and a metal line on the front side of the first substrate; bonding a second substrate with the front side of the first substrate where the metal line is formed; removing a lower part of the first substrate under the ion implantation layer; applying wet etching to a back side of the first substrate after removing the lower part; and forming a microlens on the photosensitive device at the back side of the first substrate.