| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing current collapse. <P>SOLUTION: A semiconductor device of the present invention comprises: a channel layer 14 composed of nitride semiconductors; an electron supplying layer 16 that is provided on the channel layer 14 and that has a larger band gap than that of the channel layer 14 and is composed of nitride semiconductors; and an Fe-doped cap layer 18 that is composed of nitride semiconductors and provided on the electron supplying layer 16. According to the present invention, current collapse can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
