| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide CMP polishing liquid that can polish a metal film at high polishing speed with excellent flatness and a method of polishing a substrate using the same. <P>SOLUTION: CMP polishing liquid contains amino acid, whose content is 0.3 mass% or more in total amount of CMP polishing liquid reference, picolinic acid, whose content is more than 0 mass% and less than 2.0 mass% in total amount of CMP polishing liquid reference, abrasive, and oxidant. The method of polishing a substrate supplies the CMP polishing liquid between a metal film on the surface of the substrate and a polishing cloth to polish the metal film by relatively moving the substrate and the polishing cloth. <P>COPYRIGHT: (C)2012,JPO&INPIT |
