| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce color unevenness on the periphery in a pixel region. <P>SOLUTION: A solid state image sensor is manufactured which comprises: a pixel region 10 where multiple pixels are arranged two-dimensionally; and a peripheral region 50 arranged on the periphery of the pixel region 10 in which the pixel region 10 and the peripheral region 50 include a plurality of wiring layers 36-38 and an insulating film 35 is arranged on the uppermost layer 38 out of the wiring layers 36-38. The manufacturing method includes a first step of forming the insulating film 35 on the pixel region 10 and the peripheral region 50, a second step of lowering the height of a part of the insulating film 35 formed in the peripheral region 50 selectively, and a third step of planarizing the insulating film 35 by performing CMP polishing of the insulating film 35 entirely over the pixel region 10 and peripheral region 50. <P>COPYRIGHT: (C)2012,JPO&INPIT |
