| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inexpensively form uniform unevenness on a silicon substrate with good reproducibility even for, as an object, a large area substrate of about 15 cm square or more which is difficult conventionally. <P>SOLUTION: The roughening method of a silicon substrate comprises: a process of applying an organic metal solution or an organic metal dispersion solution on a substrate in a dot shape with an ink jet method; a process of drying the substrate; a process of irradiating the surface of the substrate with plasma; and a process of etching the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
