发明名称 manufacturing method of high resistive metal thin film using intermittent sputtering
摘要 PURPOSE: A manufacturing method for a high-resistance metal thin film using intermittent sputtering is provided to cost-efficiently manufacture a metal thin film having a desired thickness. CONSTITUTION: A manufacturing method for a high-resistance metal thin film using intermittent sputtering is as follows. A substrate is pre-sputtered(S200). Metal thin films are deposited on the substrate through sputtering(S300). The sputtering deposition is stopped and delayed(S400). A thin film having a specific thickness is formed by repeating the processes(S500).
申请公布号 KR20120011720(A) 申请公布日期 2012.02.08
申请号 KR20100073798 申请日期 2010.07.30
申请人 KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION;FORUSTEK CO., LTD. 发明人 CHO, CHAN SEOB
分类号 C23C14/34;C23C14/54 主分类号 C23C14/34
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