发明名称 |
manufacturing method of high resistive metal thin film using intermittent sputtering |
摘要 |
PURPOSE: A manufacturing method for a high-resistance metal thin film using intermittent sputtering is provided to cost-efficiently manufacture a metal thin film having a desired thickness. CONSTITUTION: A manufacturing method for a high-resistance metal thin film using intermittent sputtering is as follows. A substrate is pre-sputtered(S200). Metal thin films are deposited on the substrate through sputtering(S300). The sputtering deposition is stopped and delayed(S400). A thin film having a specific thickness is formed by repeating the processes(S500).
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申请公布号 |
KR20120011720(A) |
申请公布日期 |
2012.02.08 |
申请号 |
KR20100073798 |
申请日期 |
2010.07.30 |
申请人 |
KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION;FORUSTEK CO., LTD. |
发明人 |
CHO, CHAN SEOB |
分类号 |
C23C14/34;C23C14/54 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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