| 摘要 |
Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region. |
