发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained. |
申请公布号 |
US2012028455(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113067788 |
申请日期 |
2011.06.27 |
申请人 |
FUKUMAKI NAOMI;HASEGAWA EIJI;IIZUKA TOSHIHIRO;YAMAMOTO ICHIRO;RENESAS ELECTRONICS CORPORATION |
发明人 |
FUKUMAKI NAOMI;HASEGAWA EIJI;IIZUKA TOSHIHIRO;YAMAMOTO ICHIRO |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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