| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride epitaxial substrate in which the value of warpage is reduced as compared with prior art. <P>SOLUTION: A group III nitride epitaxial substrate comprises an Si substrate, a super lattice laminate formed on the Si substrate, and a group III nitride laminate grown epitaxially on the super lattice laminate. The super lattice laminate includes a plurality of sets of laminate having, sequentially from the Si substrate side, a first layer containing an AlN material, a second layer containing an Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N(0<x<1) material, and a third layer containing an Al<SB POS="POST">y</SB>Ga<SB POS="POST">1-y</SB>N(0≤y<1) material (where, the Al composition x of the second layer and the Al composition y of the third layer has a relation of y<x). <P>COPYRIGHT: (C)2012,JPO&INPIT |
