Method for forming silicide of semiconductor device

摘要

A silicide forming method for a semiconductor device. A silicide forming method may include forming a gate electrode by depositing a gate oxide film and/or polysilicon over a silicon substrate and patterning. A silicide forming method may include forming a nitride film spacer over sidewalls of a gate electrode and simultaneously performing source/drain implant and amophization implant over a silicon substrate. A silicide forming method may include depositing an insulating film after performing source/drain and amophization implants. A silicide forming method may include partially and/or entirely exposing a source/drain and/or gate electrode disposed under an insulating film by etching an insulating film. A silicide forming method may include applying a metal film over a silicon substrate and forming silicide over regions etched by performing heat treatment over a source/drain and/or gate electrode.