| 摘要 |
<p>Method for producing semiconductor wafers composed of siliconAbstractA method for producing semiconductor wafers composed of silicon, comprisingpulling a single crystal at a seed crystal from a melt heated in a crucible;supplying heat to the center of the crucible bottom with a heating power which, in the course of a cylindrical section of the single crystal being pulled, is increased at least once to not less than 2 kW and is then decreased again; andslicing the semiconductor wafers from the pulled single crystal.Figure 1</p> |
