| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an intelligent power module (IPM) capable of properly detecting a rise in temperature of a power semiconductor chip and controlling the power semiconductor chip. <P>SOLUTION: In a power semiconductor module 10, a first heat sink 31 and a second heat sink 32, which are formed apart from each other, are used. A power semiconductor chip (a first semiconductor chip) 41 is mounted on a primary surface of the first heat sink 31, and a control IC chip (a second semiconductor chip) 42 is mounted on a primary surface of the second heat sink 32. The first heat sink 31 and the second heat sink 32 are separated from the side surface on which leads 21 to 27 are disposed toward the opposite side surface. The control IC chip 42 is mounted on a place adjacent to a projecting portion 31A of the second heat sink 32. <P>COPYRIGHT: (C)2012,JPO&INPIT |
