| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a cleaning method and a substrate processing apparatus for realizing cleaning that satisfies both of reduction in damages on quartz and enhancement in removal rate of a deposit. <P>SOLUTION: The semiconductor device manufacturing method comprises: a step of forming thin films on a substrate by supplying process gasses into a processing container in which the substrate is housed; and a step of cleaning the inside of the processing container by supplying cleaning gases into the processing container, after performing the forming step of the thin films predetermined times. In the cleaning step of the inside of the processing container, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gases into the processing container in the heated atmosphere of below atmospheric pressure so as to remove a deposit including a thin film attached to the inside of the processing container by thermochemical reaction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
