发明名称 |
Method of fabricating a semiconductor device with a back electrode |
摘要 |
A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations. |
申请公布号 |
US8101465(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20070723449 |
申请日期 |
2007.03.20 |
申请人 |
HATA MASAYUKI;TODA TADAO;OKAMOTO SHIGEYUKI;INOUE DAIJIRO;SANYO ELECTRIC CO., LTD. |
发明人 |
HATA MASAYUKI;TODA TADAO;OKAMOTO SHIGEYUKI;INOUE DAIJIRO |
分类号 |
H01L21/00;H01L21/20;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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