| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a difference in transistor characteristics in a chip due to variation in bonding stress occurring when a semiconductor chip and an external substrate are bonded. <P>SOLUTION: A semiconductor device 500 comprises: a semiconductor wafer 10; outer peripheral electrode pads 31 formed in outer peripheral regions 251 on a top surface of the semiconductor wafer 10; inner peripheral electrode pads 32 formed in an inner peripheral region 252 on the top surface of the semiconductor wafer 10; a surface protection film 40 in which outer peripheral openings 41 are formed on the outer peripheral electrode pads 31 and inner peripheral openings 42 are formed on the inner peripheral electrode pads 32; outer peripheral bumps 51 that are formed on the outer peripheral electrode pads 31 and are connected to the outer peripheral electrode pads 31 through the outer peripheral openings 41; inner peripheral bumps 52 that are formed on the inner peripheral electrode pads 32 and are connected to the inner peripheral electrode pads 32 through the inner peripheral openings 42. An outer peripheral opening dimension 261 of the outer peripheral openings 41 is larger than an inner peripheral opening dimension 262 of the inner peripheral openings 42. <P>COPYRIGHT: (C)2012,JPO&INPIT |
