GAN-BASED SEMICONDUCTOR OPTICAL ELEMENT, METHOD OF MANUFACTURING GAN-BASED SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER, AND METHOD OF GROWING GAN-BASED SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor optical element in which degradation of emission properties due to In segregation in an active layer is prevented.

SOLUTION: In a GaN-based semiconductor optical element 11a, a main surface 13a of a substrate 13 is tilted at a tilt angle in a range from 63 degrees or more to less than 80 degrees from the surface orthogonal to a reference axis Cx extending along the c-axis of a first GaN-based semiconductor in the direction of the m-axis of the first GaN-based semiconductor. A GaN-based semiconductor epitaxial region 15 is provided on the main surface 13a. An active layer 17 is provided on the GaN-based semiconductor epitaxial region 15. The active layer 17 includes at least one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The film thickness direction of the semiconductor epitaxial layer 19 is tilted from the reference axis Cx. The reference axis Cx faces toward the [0001] axis of the first GaN-based semiconductor.

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