发明名称 OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
摘要 A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
申请公布号 US2012012839(A1) 申请公布日期 2012.01.19
申请号 US201113243584 申请日期 2011.09.23
申请人 BAE JONG-UK;SEO HYUN-SIK;KIM YONG-YUB 发明人 BAE JONG-UK;SEO HYUN-SIK;KIM YONG-YUB
分类号 H01L33/16 主分类号 H01L33/16
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