发明名称 COMPOSITION FOR REMOVING POLYMER RESIDUE OF PHOTOSENSITIVE RESISTIVE ETCHING FILM
摘要 PURPOSE: A composition for residues from a photo-sensitive anti-etching film is provided to simultaneously eliminate insoluble residues generated from etching and ashing processes and wash aluminum, copper wires, and tungsten plugs. CONSTITUTION: A composition for residues from a photo-sensitive anti-etching film includes 1-70 weight% of glycolic acid and remaining amount of water. The pH value of the composition is adjusted to be in a range between 4 and 10 by applying a pH adjusting agent. 5-50 parts by weight of the pH adjusting agent is included in 100 parts by weight of the mixture of the glycolic acid and water. The pH adjusting agent is one or the mixture of primary alkyl amine, secondary alkyl amine, tertiary alkyl amine, or alkanol amine.
申请公布号 KR20120006469(A) 申请公布日期 2012.01.18
申请号 KR20110128165 申请日期 2011.12.02
申请人 CHOI, HO SUNG 发明人 CHOI, HO SUNG
分类号 G03F7/42;G03F7/26 主分类号 G03F7/42
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