| 摘要 |
Disclosed herein is a method of forming a CIGS thin film, comprising the steps of: immersing a substrate comprising an electrode into an electrolyte solution comprising Na2SO4, a water-soluble copper (Cu) precursor, a water-soluble indium (In) precursor, a water-soluble gallium (Ga) precursor, and a water-soluble selenium (Se) precursor; performing electrodeposition in such a way as to apply a direct current (DC) voltage of−0.95V˜−0.85V to the electrolyte solution at room temperature and normal pressure for 10˜120 minutes to form a preliminary CIGS thin film; and heat-treating the preliminary CIGS thin film at 230˜270° C. to form a CIGS thin film.
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