| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device which includes a buried gate is provided to eliminate a berm arranged in a boundary area of a cell region and peripheral region with an etching process using a photosensitive pattern, thereby fundamentally preventing problems from eliminating the berm using a chemical-mechanical polishing method. CONSTITUTION: A plurality of buried gates(200) is arranged in a cell region of a substrate(31). A first insulating film(36) is arranged on the surface of the substrate. The substrate of a peripheral region is exposed using a peripheral open mask. A peripheral gate conductive film(41A) is arranged on the surface of the substrate. The first insulating film of the cell region is exposed using a cell open mask. A photosensitive pattern(43) which opens an overlapped region of the cell open mask and peripheral open mask is arranged.</p> |
