| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to solve the problem of a semiconductor device becoming depleted whereby the edge of a vertical pillar forms an intersection with a gate oxide film of the semiconductor device. CONSTITUTION: A hard mask pattern is expanded to a second direction on a semiconductor substrate. A silicon line pattern is formed by etching the semiconductor substrate using the hard mask pattern as an etching mask. A vertical pillar(104) is defined by a trench(T). An oxide film(106) is formed on the sidewall of a silicon line pattern. A barrier metal layer is formed on the surface between silicon line patterns which are adjacent to a first direction. A bit line is formed on the top of the barrier metal layer. A nitride film(114) and an inter-layer insulating film(116) are formed on the top of the silicon line pattern.</p> |
