发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.
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申请公布号 |
US2012003821(A1) |
申请公布日期 |
2012.01.05 |
申请号 |
US201113172403 |
申请日期 |
2011.06.29 |
申请人 |
YUI KEIICHI;FURUYA AKIRA;NAKATA KEN;KITAMURA TAKAMITSU;MAKABE ISAO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YUI KEIICHI;FURUYA AKIRA;NAKATA KEN;KITAMURA TAKAMITSU;MAKABE ISAO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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