| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a parasitic transistor operation, which is that a transistor starts to operate by a lower threshold voltage than the threshold voltage in designing. <P>SOLUTION: A semiconductor device 100 comprises a transistor including a trench 162 formed in an element formation region of a substrate 102, a gate insulating film 120 formed on the side surfaces and the bottom surface of the trench 162, a gate electrode 122 formed on the gate insulating film 120 so as to fill in the trench 162, a source region 112 formed on one of the sides of a surface of the substrate 102 in a gate length direction, and a drain region 113 formed on the other side of the surface of the substrate in the gate length direction. The gate electrode 122 is formed so as to be exposed on the substrate 102 outside the trench 162. Additionally, the gate electrode 122 is provided so as to cover the upper portions of both ends on the trench 162 in the gate length direction, and to have at least one recess at the center of a depth reaching the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
