发明名称 Image sensor and method for manufacturing the same
摘要 Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, an image sensing device, and a second conduction type interfacial layer. The metal interconnection and the readout circuitry may be formed on and/or over the first substrate. The image sensing device may include a first conduction type conduction layer and a second conduction type conduction layer and may be electrically connected to the metal interconnection. The second conduction type interfacial layer may be formed in a pixel interface of the image sensing device.
申请公布号 US8089106(B2) 申请公布日期 2012.01.03
申请号 US20080344541 申请日期 2008.12.28
申请人 HWANG JOON;DONGBU HITEK CO., LTD. 发明人 HWANG JOON
分类号 H01L27/148 主分类号 H01L27/148
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