发明名称 |
Precharge circuits and methods for content addressable memory (CAM) and related devices |
摘要 |
A method may include selectively coupling a result line to a reference node in response to a compare data value being applied to a plurality of compare cell circuits; precharging the result line to the precharge potential by enabling a first precharge path while the compare data value is being applied; and after precharging the result line by enabling the first precharge path, disabling the first precharge path to place it in a high impedance state. |
申请公布号 |
US8089794(B1) |
申请公布日期 |
2012.01.03 |
申请号 |
US20100861084 |
申请日期 |
2010.08.23 |
申请人 |
DESHPANDE CHETAN;NATARAJ BINDIGANAVALE S.;NETLOGIC MICROSYSTEMS, INC. |
发明人 |
DESHPANDE CHETAN;NATARAJ BINDIGANAVALE S. |
分类号 |
G11C15/00 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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